Bandwidth enhancement in an InGaN/GaN three-section superluminescent diode for optical coherence tomography

In this paper, the optoelectronic properties of InGaN-based blue (430nm) superluminescent light-emitting diodes with a multi-section, three contact design are reported. The bias conditions of the rear absorber section and gain sections are explored in terms of enhancing and maximizing spectral bandwidth. We demonstrate that broader emission can be obtained with a short circuit, rather than an open circuit absorber section, and with two active regions at different current densities ...
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