1. Articles mentioning both Ziyang Zhang and University of Sheffield

    1-6 of 6
    1. GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

      GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures
      A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of ...
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    2. Feature Of The Week 2/22/09: Self-Assembled Quantum Dots for High-Performance Broadband Optical Coherence Tomography Sources

      Feature Of The Week 2/22/09: Self-Assembled Quantum Dots for High-Performance Broadband Optical Coherence Tomography Sources
      ...heir natural broad emission spectra due to the large dot sizes inhomogeneity. Dr. Ziyang Zhang et al from the University of Sheffield have done a lot of interesting work on the investigation of high performance QD-SLEDs....
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    3. A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap

      A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap
      ...ed by post-growth intermixing under a GaAs proximity cap Department of Electronic and Electrical Engineering, University of Sheffield, Sir Frederick Mappin Building, Mappin Street, Sheffield S1 3JD, UK E-mail: ziyang.zha...
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    4. Realization of extremely broadband quantum-dot superluminescent light-emitting diodes by rapid thermal-annealing process

      The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a 3 dB emission bandwidth of 146 nm centered at 984 nm with cw output power as high as 15 mW at room temperature corresponding to an extremely small coherence length of 6.6 μm.
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    5. 1-6 of 6
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    1. (4 articles) Richard A. Hogg
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