1. Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

    Superluminescent diode with a broadband gain based on self-assembled InAs quantum dots and segmented contacts for an optical coherence tomography light source

    We report a broadband-gain superluminescent diode (SLD) based on self-assembled InAs quantum dots (QDs) for application in a high-resolution optical coherence tomography (OCT) light source. Four InAs QD layers, with sequentially shifted emission wavelengths achieved by varying the thickness of the In 0.2 Ga 0.8 As strain-reducing capping layers, were embedded in a conventional p-n heterojunction comprising GaAs and AlGaAs layers. A ridge-type waveguide with segmented contacts was formed on the grown wafer, and an as-cleaved 4-mm-long chip (QD-SLD) was prepared. The segmented contacts were effective in applying a high injection current density to the QDs and obtaining ...

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