1. GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

    GaAs-Based Superluminescent Light-Emitting Diodes with 290-nm Emission Bandwidth by Using Hybrid Quantum Well/Quantum Dot Structures

    A high-performance superluminescent light-emitting diode (SLD) based upon a hybrid quantum well (QW)/quantum dot (QD) active element is reported and is assessed with regard to the resolution obtainable in an optical coherence tomography system. We report on the appearance of strong emission from higher order optical transition from the QW in a hybrid QW/QD structure. This additional emission broadening method contributes significantly to obtaining a 3-dB linewidth of 290 nm centered at 1200 nm, with 2.4 mW at room temperature.

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